![]() ![]() The hot rock author. Abstract: K8A60D TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching, sensitive device. PART NUMBER REPLACE PART PRODUCT SUMMARY CASE PINOUT PNP Silicon =MMBT 404A =MMBT 404A MOS FET Channel N =MMFT 2N02EL =MMFT 2N02EL NPN Germanium AC 127, ASY 28.29, 2SD30 25V, 5mA, 0,025W NPN Germanium - 40V, 0,15W, >7MHz PNP Germanium AF 124.127, AF 200 35V, 0,12W, PNP Germanium AF 124.127, AF 200 35V, 0,12W, NPN Silicon BC 168, BC 183, BC 238, BC 548 15V, 0,025A, 0,15W, B>20 NPN Silicon BC 168, BC 183, BC 238, BC 548 =2N1005, B>45 PNP Germanium AD 149, AUY 19.20, 2N1529.48 40V, 3A, 30W PNP Germanium AC 125.126, AC 151, 2N1191.94 20V, 0,3A, 0,2W.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |